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2SD2557 Dataheets PDF



Part Number 2SD2557
Manufacturers INCHANGE
Logo INCHANGE
Description NPN Transistor
Datasheet 2SD2557 Datasheet2SD2557 Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 1500(Min.)@ IC= 1A, VCE= 5V ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base V.

  2SD2557   2SD2557


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