2SD2558

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·High DC Current Gain- : hFE= 1500( Min.) @(IC= 1A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 1A, IB= 5mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 60 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2558 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 5mA ICBO Collector Cutoff current VCB= 200V, IE= 0 IEBO Emitter Cutoff current VEB= 6V, IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V COB Output Capacitance fT Current-Gain—Bandwidth Product IE= 0; VCB= 10V; ftest= 1MHz IE= -0.5A; VCE= 10V 2SD2558 MIN TYP. MAX UNIT 200 V 1.5 V 0.1 mA 5.0 mA 1500 6500 110 pF 15 MHz Notice： ISC reserves the rights...