2SD2561

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 10A, VCE= 4V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 10A, IB= 10mA) ·Complement to Type 2SB1648 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 17 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 200 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2561 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 10mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 10mA ICBO Collector Cutoff Current VCB= 150V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 10A ; VCE= 4V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz fT Current-Gain—Bandwidth Product  hFE Classifications O P Y IE...