2SD2579

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 8 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 20 A 3.0 W 60 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2579 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2579 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A 1.5 V ICBO Collector Cutoff Current VCB= 800V ; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V ; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 20 35 hFE-2 DC Current Gain tf Fall Time IC= 5A ; VCE= 5V 5 IC= 4A , IB1= 0.8A ; IB2= 1.6A PW=20μs; Duty Cycle≤1% 8 0.3 μs No...