2SD2593

isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.2 (Max)@ IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5 A 2 W 35 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD2593 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SD2593 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO Collector-Emitter Breakdown Voltage IC=30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A ICBO Collector Cutoff Current VCB= 60V; IE= 0 ICEO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB=6V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 4V hFE-2 DC Current Gain IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IC= 0.5A ;VCE= 10V; f=10MHz ton Turn-on Time tf Fall Time MIN TYP. MAX UNIT 60 V 1.2 V 200 μA 300 μA 1 mA 70 250 10 30 MHz 0.5 μs 0.4 μs Notice： ISC reserves the rights to make changes of the content herein the datash...