isc Silicon PNP Power Transistor
ESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Vo...
isc Silicon
PNP Power
Transistor
ESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -45V(Min.) ·Complement to type BD131 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-70
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.5
A
15
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6
℃/W
BD132
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= -0.5A; IB= -50mA
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -2A; IB= -0.2A
VCB= -40V; IE= 0 VCB= -40V; IE= 0,TC=150℃
VEB= -3V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A; VCE= -12V
...