isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining...
isc Silicon
PNP Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= -0.15A ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= -60V(Min) ·Complement to type BD137 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
IC IB
PC
TJ Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous Collector Power Dissipation @ Ta=25℃ Collector Power Dissipation @ TC=25℃ Junction Temperature
Storage Temperature Range
-60
V
-60
V
-5
V
-1.5
A
-0.5
A
1.25 W
12.5
150
℃
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
10 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W
BD138
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -0.5A; VCE= -2V
VCB= -30V; IE= 0 VCB= -30V; IE= 0,TC=125℃
VEB= -5V; IC=0
hFE-1
DC Current Gain
...