BD159

isc Silicon NPN Power Transistor BD159 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·DC Current Gain- : hFE = 30~240(Min) @ IC= 50mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 375 V VCEO Collector-Emitter Voltage 350 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.5 A ICM Collector Current-Peak 1.0 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.25 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 6.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA ICBO Collector Cutoff Current VCB= 375V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain IC= 50m A; VCE= 10V BD159 MIN M...