isc Silicon NPN Power Transistor
BD175
DESCRIPTION ·DC Current Gain-
: hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter ...
isc Silicon
NPN Power
Transistor
BD175
DESCRIPTION ·DC Current Gain-
: hFE= 40-250(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage -
: VCEO(SUS)= 45V(Min) ·Complement to type BD176 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
45
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Pulse
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
30
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 1A; VCE= 2V
ICBO
Collector Cutoff Current
VCB= 45V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 150mA; VCE= 2V
hFE-2
DC Current Gain
IC= 1A; VCE= 2V
fT
Current-Gain—Bandwidth Product IC= 0.25A; VCE=...