BD203F

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in hi-fi equipment delivering an output of 15 to 15 W into a 4Ωor 8Ωload. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD201F 60 VCBO Collector-Base Voltage V BD203F 60 BD201F 45 VCEO Collector-Emitter Voltage V BD203F 60 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 12 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 6.3 ℃/W BD201F/203F isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD201F/203F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage BD201F BD203F IC= 50mA ;IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ;IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC=...