isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A ·Complement to Type BD227/229/231 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD226
45
VCBO
Collector-Base Voltage BD228
60
BD230
100
BD226
45
VCEO
Collector-Emitter Voltage BD228
60
BD230
80
VCER
Collector-Emitter Voltage(RBE= 1kΩ)
BD226
45
BD228
60
BD230
100
VEBO
Emitter-Base Voltage
5
IC
Collector Current-Continuous
1.5
ICM
Collector Current-Peak
PC
Collector Power Dissipation @ TC≤62℃
TJ
Junction Temperature
3.0 12.5 150
Tstg
Storage Temperature Range
-65~150
UNIT V
V
V
V A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
7 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W
BD226/228/230
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD226 BD228 IC= 50mA ; IB= 0 BD230
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 1A; VCE= 2V
VCB= 30V; IE= 0 VCB= 30V; IE= 0,TC=125℃
VEB= 5V; IC=0
hFE-1
DC Current ...
