DatasheetsPDF.com

BD229 Dataheets PDF



Part Number BD229
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD229 DatasheetBD229 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD227 -45 VCBO Collector-Base Voltage BD229 -60 BD231 -100 BD227 -45 VCEO Collector-Emitter Voltage BD229 -60 BD231 -80 VCER Collector-Emitter .

  BD229   BD229



Document
isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD227 -45 VCBO Collector-Base Voltage BD229 -60 BD231 -100 BD227 -45 VCEO Collector-Emitter Voltage BD229 -60 BD231 -80 VCER Collector-Emitter Voltage(RBE= 1kΩ) BD227 BD229 BD231 -45 -60 -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1.5 ICM Collector Current-Peak PC Collector Power Dissipation @ TC≤62℃ TJ Junction Temperature -3.0 12.5 150 Tstg Storage Temperature Range -65~150 UNIT V V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD227/229/231 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD227 BD229 IC= -50mA ; IB= 0 BD231 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= -1A; VCE= -2V VCB= -30V; IE= 0 VCB= -30V; IE= 0,TC= 125℃ VEB= -5V; IC=0 hFE-1 DC Current Gain IC= -1A ; VCE= -2V hFE-2 DC Current Gain IC= -0.15A ; VCE= -2V hFE-3 DC Current Gain IC= -5mA ; VCE= -2V fT Current-Gain—Bandwidth Product IC= -50mA ; VCE= -5V BD227/229/231 MIN TYP. MAX UNIT -45 -60 V -80 -0.8 V -1.3 V -0.1 -10 μA -10 μA 25 40 250 40 50 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


BD227 BD229 BD231


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)