isc Silicon NPN Power Transistor
BD232
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
:...
isc Silicon
NPN Power
Transistor
BD232
DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 300V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power output stages and line driver
in TV receivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES Collector-Emitter Voltage
500
V
VCEO Collector-Emitter Voltage
300
V
VEBO Emitter-Base Voltage
5.0
V
IC
Collector Current-Continuous
0.5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.25
A
20
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 6.25 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 150mA; IB= 15mA
ICES
Collector Cutoff Current
VCE= 500V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Cain
IC= 50mA ; VCE= 5V
hFE-2
DC Current Cain
IC= 150mA ; VCE= 5V
BD232
MIN TYP. MAX UNIT
300
V
1.0
V
100 μA
10 μA
25
150
20
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without no...