BD240

isc Silicon PNP Power Transistor BD240/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD240; -60V(Min)- BD240A -80V(Min)- BD240B; -100V(Min)- BD240C ·Complement to Type BD239/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD240 -55 VCER Collector-Emitter Voltage BD240A -70 V BD240B -90 BD240C -115 BD240 -45 VCEO Collector-Emitter Voltage BD240A -60 V BD240B -80 BD240C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -4 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.6 A 30 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 4.17 ℃/W 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD240/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD240 VCEO(SUS) Collector-Emitter Sustaining Voltage BD240A BD240B IC= -30mA; IB= 0 BD240C VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V BD240 VCE= -45V; VBE= 0 ICES Colle...