isc Silicon PNP Power Transistor
BD240/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.2A ·Collector-Emitter...
isc Silicon
PNP Power
Transistor
BD240/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BD240; -60V(Min)- BD240A -80V(Min)- BD240B; -100V(Min)- BD240C
·Complement to Type BD239/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD240
-55
VCER
Collector-Emitter Voltage
BD240A
-70
V
BD240B
-90
BD240C
-115
BD240
-45
VCEO
Collector-Emitter Voltage
BD240A
-60
V
BD240B
-80
BD240C
-100
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-4
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-0.6
A
30
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
isc website:www.iscsemi.com
MAX UNIT 4.17 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
BD240/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD240
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD240A BD240B
IC= -30mA; IB= 0
BD240C
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -4V
BD240
VCE= -45V; VBE= 0
ICES
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