isc Silicon NPN Power Transistor
BD241/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter ...
isc Silicon
NPN Power
Transistor
BD241/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 45V(Min)- BD241; 60V(Min)- BD241A 80V(Min)- BD241B; 100V(Min)- BD241C
·Complement to Type BD242/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD241
55
BD241A
70
VCBO
Collector-Base Voltage
V
BD241B
90
BD241C
115
BD241
45
VCEO
Collector-Emitter Voltage
BD241A
60
V
BD241B
80
BD241C
100
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
3.0
A
ICM
Collector Current-Peak
5.0
A
IB
Base Current
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
1.0
A
40
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 3.125 ℃/W
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isc Silicon
NPN Power
Transistor
BD241/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
BD241
45
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD241A BD241B
IC= 30mA ;IB= 0
60 V
80
BD241C
100
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A
1.2
V
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 4V...