BD244

isc Silicon PNP Power Transistor BD244/A/B/C DESCRIPTION ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C ·Complement to Type BD243/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD244 -45 BD244A -60 VCBO Collector-Base Voltage V BD244B -80 BD244C -100 BD244 -45 VCEO Collector-Emitter Voltage BD244A -60 V BD244B -80 BD244C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6.0 A ICM Collector Current-Peak -10 A IB Base Current PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -2.0 A 65 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD244/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD244 VCEO(SUS) Collector-Emitter Sustaining Voltage BD244A BD244B IC= -30mA ;IB=0 BD244C VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V BD244 VCE= -45V; VBE= 0...