BD245

isc Silicon NPN Power Transistor BD245/A/B/C DESCRIPTION ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD245 55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD245A BD245B 70 90 V BD245C 115 BD245 45 VCEO Collector-Emitter Voltage BD245A 60 V BD245B 80 BD245C 100 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 3 W 80 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case isc website：www.iscsemi.com MAX UNIT 1.56 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD245/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD245 45 V(BR)CEO Collector-Emitter Breakdown Voltage BD245A BD245B IC= 30mA ;IB=0 60 80 V BD245C 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.0 V VCE(sat)-2 Co...