BD246A

isc Silicon PNP Power Transistor BD246/A/B/C DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD246 -55 VCER Collector-Emitter Voltage (RBE= 100Ω) BD246A BD246B -70 -90 BD246C -115 BD246 -45 VCEO Collector-Emitter Voltage BD246A -60 BD246B -80 BD246C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -10 ICM Collector Current-Peak -15 IB Base Current -3 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 3 80 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD246/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD246 V(BR)CEO Collector-Emitter Breakdown Voltage BD246A BD246B BD246C VCE(sat)-1 Collector-Emitter Saturation Voltage VCE(sat)-2 Collector-Emitter Saturation Voltage VBE(on)-1 Base-Emitter On Voltage VBE(on)-2...