isc Silicon PNP Power Transistor
BD246/A/B/C
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Vol...
isc Silicon
PNP Power
Transistor
BD246/A/B/C
DESCRIPTION ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C
·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
BD246
-55
VCER
Collector-Emitter Voltage (RBE= 100Ω)
BD246A BD246B
-70 -90
BD246C -115
BD246
-45
VCEO
Collector-Emitter Voltage
BD246A
-60
BD246B
-80
BD246C -100
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-10
ICM
Collector Current-Peak
-15
IB
Base Current
-3
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipation
@ TC=25℃
3 80
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT
V
V
V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.56 ℃/W
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isc Silicon
PNP Power
Transistor
BD246/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD246
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD246A BD246B
BD246C
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(on)-1 Base-Emitter On Voltage
VBE(on)-2...