BD277

isc Silicon PNP Power Transistor DESCRIPTION ·Wide Area of Safe Operation ·Low Saturation Voltage·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in series regulators and shunt regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -4 IC Collector Current-Continuous -7 IB Base Current -3 PC Collector Power Dissipation @ TC=25℃ 70 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.78 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 70 ℃/W BD277 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.75A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1.75A ; VCE= -2V ICBO Collector Cutoff Current VCB= -45V; IE= 0 VCB= -40V; IE= 0; TC= 150℃ ICEO Collector Cutoff Current VCE= -30V; IB= 0 IEBO Emitter Cutoff Current VEB= -4V; IC= 0 hFE DC Current Gain IC= -1.75A; VCE= -2V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V BD277 MIN MAX UNIT ...