isc Silicon NPN Power Transistor
BD311
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = ...
isc Silicon
NPN Power
Transistor
BD311
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 5A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0 V(Max)@ IC = 5A ·Complement to Type BD312 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high quality amplifiers operating up to 60 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
20
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation@TC=25℃ 115
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT 1.52 ℃/W
isc website：www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
VBE(on) Base-Emitter On Voltage
IC= 5A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 60V; IB=0
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC=0
hFE-1
DC Current Gain
IC= 5A; VCE= 4V
hFE-2 Is/b fT
D...
