BD313

isc Silicon NPN Power Transistor BD313 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE= 25(Min.)@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0 V(Max)@ IC = 5A ·Complement to Type BD314 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high quality amplifiers operating up to 60 watts into 4 ohm load. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25℃ 115 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.52 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V ICBO Collector Cutoff Current VCB= 80V; IB=0 IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 hFE-1 DC Current Gain IC= 4A; VCE= 4V hFE-2 DC Curren...