BD329

isc Silicon NPN Power Transistor BD329 DESCRIPTION ·DC Current Gain- : hFE= 85~375(Min)@ IC= 0.5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 20V(Min) ·Complement to type BD330 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Especially for battery equipped applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 32 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A IBM Base Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 7 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD329 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 20 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.5 V VBE(on)-1 Base-Emitter On Voltage IC= 5mA; VCE= 10V 0.6 V VBE(on)-2 Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2A; VCE= 1V VCB= 32V; IE= 0 VCB= 32V; IE= 0,TC=150℃ VEB= 5V; IC= 0 1.2 V 0.1 10 μA 0.1 μA hFE-1...