isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD375
50
VCBO
Collector-Base Voltage BD377
75
V
BD379
100
BD375
45
VCEO
Collector-Emitter Voltage BD377
60
V
BD379
80
VEBO
Emitter-Base.