BD379

isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= 1A ·Complement to Type BD376/378/380 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD375 50 VCBO Collector-Base Voltage BD377 75 V BD379 100 BD375 45 VCEO Collector-Emitter Voltage BD377 60 V BD379 80 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak 3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BD375/377/379 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage BD375 BD377 BD379 BD375 VCBO Collector-Base Voltage BD377 BD379 VCE(sat) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage BD375 ICBO Collector Cutoff Current BD377 BD379 IEBO Emitter Cutoff Current hFE-1 DC Current Gain hFE-2 DC Current Gain Switching Times ton Turn-On Time toff Turn-Off Time CONDITIONS IC= 30mA ; IB= 0 IC= 0.1mA ; IE= 0 IC= 1A; IB= 0.1A IC= 1A; VCE= 2V VCB= 45V; IE= 0 VCB= 60V; IE= 0 VCB= 80V; IE= 0 VEB= 5V; IC= 0 IC= 0.15A ; VCE= 2...