isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/3...
isc Silicon
PNP Power
Transistors
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD376
-50
VCBO
Collector-Base Voltage BD378
-75
V
BD380
-100
BD376
-45
VCEO
Collector-Emitter Voltage BD378
-60
V
BD380
-80
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-1
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
BD376/378/380
isc website:www.iscsemi.com
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isc Silicon
PNP Power
Transistors
BD376/378/380
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD376 BD378 BD380
IC= -30mA ; IB= 0
BD376
VCBO
Collector-Base Voltage BD378 IC= -0.1mA ; IE= 0
BD380
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(on) Base-Emitter On Voltage
IC= -1A; VCE= -2V
BD376 VCB= -45V; IE= 0
ICBO
Collector Cutoff Current BD378 VCB= -60V; IE= 0
BD380 VCB= -80V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.15A ; VCE= -2V
hFE-2
DC Current Gain
IC= -1A; VC...