isc Silicon PNP Power Transistors
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for medium power linear and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD376
-50
VCBO
Collector-Base Voltage BD378
-75
V
BD380
-100
BD376
-45
VCEO
Collector-Emitter Voltage BD378
-60
V
BD380
-80
VEBO
Emitt.