BD380

isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= -1A ·Complement to Type BD375/377/379 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD376 -50 VCBO Collector-Base Voltage BD378 -75 V BD380 -100 BD376 -45 VCEO Collector-Emitter Voltage BD378 -60 V BD380 -80 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A ICM Collector Current-Peak -3 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ BD376/378/380 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BD376/378/380 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD376 BD378 BD380 IC= -30mA ; IB= 0 BD376 VCBO Collector-Base Voltage BD378 IC= -0.1mA ; IE= 0 BD380 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -2V BD376 VCB= -45V; IE= 0 ICBO Collector Cutoff Current BD378 VCB= -60V; IE= 0 BD380 VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.15A ; VCE= -2V hFE-2 DC Current Gain IC= -1A; VC...