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BD724 Dataheets PDF



Part Number BD724
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BD724 DatasheetBD724 Datasheet (PDF)

isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -100V(Min) ·Complement to type BD723 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Ba.

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isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -100V(Min) ·Complement to type BD723 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -4 ICM Collector Current-Peak -7 IB Base Current-Continuous -1 PC Collector Power Dissipation @ TC=25℃ 36 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W BD724 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -4V ICBO Collector Cutoff Current VCB= -100V; IE= 0 VCB= -50V; IE= 0; TC= 150℃ ICEO Collector Cutoff Current VCE= -50V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -4V hFE-2 DC Current Gain IC= -2A; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.5A; VCE= -4V Switching Times ton Turn-On time toff Turn-Off time IC= -1A; IB1= -IB2= -0.1A; VCC= -20V BD724 MIN TYP. MAX UNIT -100 V -1.0 V -1.4 V -50 μA -1 mA -0.1 mA -0.2 mA 40 20 3 MHz 0.1 μs 0.4 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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