isc Silicon PNP Power Transistor
BD726
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown...
isc Silicon
PNP Power
Transistor
BD726
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -120V(Min) ·Complement to type BD725 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output and general purpose
amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-120
VCEO
Collector-Emitter Voltage
-120
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-4
ICM
Collector Current-Peak
-7
IB
Base Current-Continuous
-1
PC
Collector Power Dissipation @ TC=25℃
36
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-65~150
UNIT V V V A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.5 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 100 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
PNP Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -4V
ICBO
Collector Cutoff Current
VCB= -120V; IE= 0 VCB= -60V; IE= 0; TC= 150℃
ICEO
Collector Cutoff Current
VCE= -60V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Cu...