BD743C

isc Silicon NPN Power Transistor BD743C DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 90W@ IC= 25℃ ·15A Continuous Collector Current ·Complement to Type BD744C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 110 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 20 IB Base Current-Continuous 5 Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ 2 90 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 15A; IB= 5A VBE(on)-1 Base-Emitter On Voltage IC= 5A ; VCE= 4V VBE(on)-2 Base-Emitter On...