BD788

isc Silicon PNP Power Transistor BD788 DESCRIPTION ·DC Current Gain- : hFE= 40~250(Min)@ IC= -0.2A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= -60V(Min) ·Complement to type BD787 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.34 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD788 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Voltage Sustaining IC= -10mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA MIN TYP. MAX UNIT -60 V -0.4 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A -0.6 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A -0.8 V VCE(sat)-4 Collector-Emitter Saturation Voltage IC= -4A; IB= ...