BD802

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min) ·Low Saturation Voltage ·Complement to Type BD801 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -3 A 65 W 150 ℃ Tstg Storage Ttemperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.92 ℃/W BD802 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD802 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1 V VBE(on) Base-Emitter On Voltage IC= -3A ; VCE= -2V -1.6 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -1 mA hFE-1 DC Current Gain...