isc Silicon PNP Darlington Power Transistor
BD896
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -45V(Min) ·High DC Current Gain
: hFE= 750(Min) @IC= -3A ·Collector Power Dissipation-
: PC= 70W@ TC= 25℃ ·8 A Continuous Collector Current ·Complement to Type BD895 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operat...
