BD941F

isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 150mA ·Complement to Type BD934F/936F/938F/940F/942F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD933F 45 BD935F 60 VCBO Collector-Base Voltage BD937F 100 BD939F 120 BD941F 140 BD933F 45 BD935F 60 VCEO Collector-Emitter Voltage BD937F 80 BD939F 100 BD941F 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 3 ICM Collector Current-Peak 7 IB Base Current-Continuous 0.5 PC Collector Power Dissipation @ TC=25℃ 19 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 4.17 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933F/935F/937F/939F/941F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD933F VCEO(SUS) Collector-Emitter Sustaining Voltage BD935F BD937F IC= 30mA ; IB= 0 BD939F BD941F VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VBE(on) ICBO ICEO Base-Emitter On Voltage Co...