BD947F

isc Silicon NPN Power Transistor BD943F/945F/947F DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944F/946F/948F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD943F 22 VCBO Collector-Base Voltage BD945F 32 V BD947F 45 BD943F 22 VCEO Collector-Emitter Voltage BD945F 32 V BD947F 45 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7.93 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD943F/945F/947F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943F BD945F BD947F IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD943F/945F IC= 2A; IB= 0.2A BD947F IC= 3A; IB= 0.3A VBE(on) ICBO ICEO Base-Emitter On Voltage BD943F/945F BD947F Collector Cutoff Current Collector Cutoff Current BD943F BD945F BD947F IC= 2A; VCE= 1V IC= 3A; VCE= 1V VCB= VCBO...