BD944F

isc Silicon PNP Power Transistor BD944F/946F/948F DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= -500mA ·Complement to Type BD943F/945F/947F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD944F -22 VCBO Collector-Base Voltage BD946F -32 V BD948F -45 BD944F -22 VCEO Collector-Emitter Voltage BD946F -32 V BD948F -45 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 22 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 7.93 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD944F/946F/948F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD944F -22 VCEO(SUS) Collector-Emitter Sustaining Voltage BD946F IC= -30mA ; IB= 0 -32 V BD948F -45 VCE(sat) Collector-Emitter Saturation Voltage BD944F/946F IC= -2A; IB= -0.2A BD948F IC= -3A; IB= -0.3A -0.5 V -0.7 VBE(on) ICBO ICEO Base-Emitter On Voltage BD944F/946F BD948F Collector Cutoff Current Collector Cutoff Curr...