isc Silicon NPN Power Transistor
BD949
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min) ·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATING...
