BDT29

isc Silicon NPN Power Transistors BDT29/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29; 60V(Min)- BDT29A 80V(Min)- BDT29B; 100V(Min)- BDT29C ·Complement to Type BDT30/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT29 80 BDT29A 100 VCBO Collector-Base Voltage BDT29B 120 BDT29C 140 BDT29 40 BDT29A 60 VCEO Collector-Emitter Voltage BDT29B 80 BDT29C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 1 ICM Collector Current-Peak 3 IB Base Current 0.4 PC Collector Power Dissipation TC=25℃ 30 Tj Junction Temperature 150 Tstg Storage Ttemperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT29 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT29A BDT29B IC= 30mA; IB= 0 BDT29C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.125A Base-Emitter On ...