isc Silicon NPN Power Transistors
BDT29F/AF/BF/CF/DF
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-...
isc Silicon
NPN Power
Transistors
BDT29F/AF/BF/CF/DF
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF
·Complement to Type BDT30F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO IC ICM IB PC Tj Tstg
BDT29F
80
Collector-Base Voltage
BDT29AF
100
BDT29BF
120
V
BDT29CF
140
BDT29DF
160
BDT29F
40
Collector-Emitter Voltage
BDT29AF
60
BDT29BF
80
V
BDT29CF
100
BDT29DF
120
Emitter-Base Voltage
5
V
Collector Current-Continuous
1
A
Collector Current-Peak
3
A
Base Current Collector Power Dissipation TC=25℃
Junction Temperature
0.4
A
19
W
150
℃
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL Rth j-c
Rth j-a
PARAMETER Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
isc website:www.iscsemi.com
MAX 9.17
UNIT ℃/W
55 ℃/W
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isc Silicon
NPN Power
Transistors
BDT29F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT29F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT29AF BDT29BF BDT29CF
IC= 30mA; IB= 0
B...