BDT29DF

isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT29F; 60V(Min)- BDT29AF 80V(Min)- BDT29BF; 100V(Min)- BDT29CF 120V(Min)- BDT29DF ·Complement to Type BDT30F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PC Tj Tstg BDT29F 80 Collector-Base Voltage BDT29AF 100 BDT29BF 120 V BDT29CF 140 BDT29DF 160 BDT29F 40 Collector-Emitter Voltage BDT29AF 60 BDT29BF 80 V BDT29CF 100 BDT29DF 120 Emitter-Base Voltage 5 V Collector Current-Continuous 1 A Collector Current-Peak 3 A Base Current Collector Power Dissipation TC=25℃ Junction Temperature 0.4 A 19 W 150 ℃ Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient isc website：www.iscsemi.com MAX 9.17 UNIT ℃/W 55 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT29F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT29F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT29AF BDT29BF BDT29CF IC= 30mA; IB= 0 B...