BDT30B

isc Silicon PNP Power Transistors BDT30/A/B/C DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30; -60V(Min)- BDT30A -80V(Min)- BDT30B; -100V(Min)- BDT30C ·Complement to Type BDT29/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in output stages of audio and television amplifier circuits where high peak powers can occur. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT30 -80 VCBO Collector-Base Voltage BDT30A BDT30B -100 -120 BDT30C -140 BDT30 -40 BDT30A -60 VCEO Collector-Emitter Voltage BDT30B -80 BDT30C -100 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -1 ICM Collector Current-Peak -3 IB Base Current -0.4 PC Collector Power Dissipation TC=25℃ 30 Tj Junction Temperature 150 Tstg Storage Ttemperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.17 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT30 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30A BDT30B IC= -30mA; IB= 0 BDT30C VCE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A ...