isc Silicon PNP Power Transistors
BDT30F/AF/BF/CF/DF
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector...
isc Silicon
PNP Power
Transistors
BDT30F/AF/BF/CF/DF
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF
·Complement to Type BDT29F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT30F
-80
VCBO
Collector-Base Voltage
BDT30AF
-100
BDT30BF
-120
V
BDT30CF
-140
BDT30DF
-160
BDT30F
-40
VCEO
Collector-Emitter Voltage
BDT30AF
-60
BDT30BF
-80
V
BDT30CF
-100
BDT30DF
-120
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-3
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-0.4
A
19
W
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 9.17 55
UNIT ℃/W ℃/W
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isc Silicon
PNP Power
Transistors
BDT30F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT30F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT30AF BDT30...
