Document
isc Silicon PNP Power Transistors
BDT30F/AF/BF/CF/DF
DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF
·Complement to Type BDT29F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation APPLICATIONS ·Designed for use in audio output stages , general purpose
amplifier and high speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDT30F
-80
VCBO
Collector-Base Voltage
BDT30AF
-100
BDT30BF
-120
V
BDT30CF
-140
BDT30DF
-160
BDT30F
-40
VCEO
Collector-Emitter Voltage
BDT30AF
-60
BDT30BF
-80
V
BDT30CF
-100
BDT30DF
-120
VEBO Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-1
A
ICM
Collector Current-Peak
-3
A
IB
Base Current
PC
Collector Power Dissipation TC=25℃
Tj
Junction Temperature
-0.4
A
19
W
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
MAX 9.17 55
UNIT ℃/W ℃/W
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isc Silicon PNP Power Transistors
BDT30F/AF/BF/CF/DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT30F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT30AF BDT30BF BDT30CF
IC= -30mA; IB= 0
BDT30DF
VCE(sat) VBE(on)
Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A
Base-Emitter On Voltage
IC= -1A ; VCE= -4V
ICES
Collector Cutoff Current
VCE= VCEOmax; VBE= 0
ICEO
Collector Cutoff Current
BDT30F/AF VCE= -30V; IB= 0
BDT30BF/CF VCE= -60V; IB= 0
BDT30DF
VCE= -90V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -0.2A ; VCE= -4V
hFE-2
DC Current Gain
IC= -1A ; VCE= -4V
fT
Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -10V
Switching Times
ton
Turn-On Time
toff
Turn-Off Time
IC= -1.0A; IB1= -IB2= -0.1A
MIN TYP. MAX UNIT -40
-60
-80
V
-100
-120
-0.7 V
-1.3 V
-0.2 mA
-0.1 mA
-0.2 mA
40
15
75
3
MHz
0.3
μs
1.0
μs
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application o.