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BDT30DF Dataheets PDF



Part Number BDT30DF
Manufacturers INCHANGE
Logo INCHANGE
Description PNP Transistor
Datasheet BDT30DF DatasheetBDT30DF Datasheet (PDF)

isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF ·Complement to Type BDT29F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applicati.

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isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -0.4A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT30F; -60V(Min)- BDT30AF -80V(Min)- BDT30BF; -100V(Min)- BDT30CF -120V(Min)- BDT30DF ·Complement to Type BDT29F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT30F -80 VCBO Collector-Base Voltage BDT30AF -100 BDT30BF -120 V BDT30CF -140 BDT30DF -160 BDT30F -40 VCEO Collector-Emitter Voltage BDT30AF -60 BDT30BF -80 V BDT30CF -100 BDT30DF -120 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICM Collector Current-Peak -3 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -0.4 A 19 W 150 ℃ Tstg Storage Ttemperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 9.17 55 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT30F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT30F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT30AF BDT30BF BDT30CF IC= -30mA; IB= 0 BDT30DF VCE(sat) VBE(on) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.125A Base-Emitter On Voltage IC= -1A ; VCE= -4V ICES Collector Cutoff Current VCE= VCEOmax; VBE= 0 ICEO Collector Cutoff Current BDT30F/AF VCE= -30V; IB= 0 BDT30BF/CF VCE= -60V; IB= 0 BDT30DF VCE= -90V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A ; VCE= -4V hFE-2 DC Current Gain IC= -1A ; VCE= -4V fT Current-Gain—Bandwidth Product IC= -0.2A ; VCE= -10V Switching Times ton Turn-On Time toff Turn-Off Time IC= -1.0A; IB1= -IB2= -0.1A MIN TYP. MAX UNIT -40 -60 -80 V -100 -120 -0.7 V -1.3 V -0.2 mA -0.1 mA -0.2 mA 40 15 75 3 MHz 0.3 μs 1.0 μs NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application o.


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