BDT31

isc Silicon NPN Power Transistors BDT31/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= 1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT31; 60V(Min)- BDT31A 80V(Min)- BDT31B; 100V(Min)- BDT31C ·Complement to Type BDT32/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER BDT31 VALUE 80 BDT 31A 100 VCBO Collector-Base Voltage BDT 31B 120 BDT 31C 140 BDT31 40 VCEO Collector-Emitter Voltage BDT 31A 60 BDT 31B 80 BDT 31C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 3 ICM Collector Current-Peak 5 IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 1 40 150 -65~15 0 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 3.12 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT31/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT31 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT 31A BDT 31B IC= 30mA; IB= 0 BDT 31C VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A VBE(on) Base-Emitter On Vo...