BDT32A

isc Silicon PNP Power Transistors BDT32/A/B/C DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32; -60V(Min)- BDT32A -80V(Min)- BDT32B; -100V(Min)- BDT32C ·Complement to Type BDT31/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER BDT32 VALUE -80 UNIT BDT 32A -100 VCBO Collector-Base Voltage V BDT 32B -120 BDT 32C -140 BDT32 -40 BDT 32A -60 VCEO Collector-Emitter Voltage V BDT 32B -80 BDT 32C -100 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -7 A IB Base Current PC Collector Power Dissipation TC=25℃ Tj Junction Temperature -1 A 40 W 150 ℃ Tstg Storage Ttemperature Range -65~150 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal Resistance,Junction to Case 3.12 Rth j-a Thermal Resistance,Junction to Ambient 70 ℃ UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT32/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT32 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT 32A BDT 32B IC= -30mA; IB= 0 BDT 32C VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A ...