BDT32AF

isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1.0A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -40V(Min)- BDT32F; -60V(Min)- BDT32AF -80V(Min)- BDT32BF; -100V(Min)- BDT32CF -120V(Min)- BDT32DF ·Complement to Type BDT31F/AF/BF/CF/DF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDT32F -80 VCBO Collector-Base Voltage BDT32AF -100 BDT32BF -120 V BDT32CF -140 BDT32DF -160 BDT32F -40 VCEO Collector-Emitter Voltage BDT32AF -60 BDT32BF -80 V BDT32CF -100 BDT32DF -120 VEBO IC ICM IB PC Tj Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Collector Power Dissipation TC=25℃ Junction Temperature -5 V -3 A -7 A -1 A 22 W 150 ℃ Tstg Storage Ttemperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -65~150 ℃ MAX UNIT Rth j-c Rth j-a Thermal Resistance,Junction to Case 8.12 ℃/W Thermal Resistance,Junction to Ambient 55 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors BDT32F/AF/BF/CF/DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BDT32F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT32AF BDT32BF BDT32CF V...