BDT41A

isc Silicon NPN Power Transistors BDT41/A/B/C DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41; 60V(Min)- BDT41A 80V(Min)- BDT41B; 100V(Min)- BDT41C ·Complement to Type BDT42/42A/42B/42C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT41 80 BDT41A 100 VCBO Collector-Base Voltage BDT41B 120 BDT41C 140 BDT41 40 VCEO Collector-Emitter Voltage BDT41A 60 BDT41B 80 BDT41C 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 6 ICM Collector Current-Peak 10 IB Base Current 3 PC Collector Power Dissipation TC=25℃ 65 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX 1.92 70 UNIT ℃/W ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41A BDT 41B IC= 30mA; IB= 0 BDT 41C VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V ICES ...