BDT41F

isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 40V(Min)- BDT41F; 60V(Min)- BDT41AF 80V(Min)- BDT41BF; 100V(Min)- BDT41CF ·Complement to Type BDT42F/42AF/42BF/42CF ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT41F 80 BDT41AF 100 VCBO Collector-Base Voltage BDT41BF 120 BDT41CF 140 BDT41F 40 VCEO Collector-Emitter Voltage BDT41AF 60 BDT41BF 80 BDT41CF 100 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 6 ICM Collector Current-Peak 10 IB Base Current 3 PC Collector Power Dissipation TC=25℃ 32 Tj Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors BDT41F/41AF/41BF/41CF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDT41F VCEO(SUS) Collector-Emitter Sustaining Voltage BDT41AF BDT41BF IC= 30mA; IB= 0 BDT41CF VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 6A ; VCE= 4V BDT41F VCE= 40V; VEB= 0 BDT41AF ICES Collector Cutoff Current BDT41BF VCE= 60V; VEB= 0 VCE= 80V; VEB= 0 BDT41CF...